| المؤلف | Jamal H. Al-yousif , Iman H. Khudayer Ahmed A. Alwan | |
| تاريخ الانضمام | 2023-12-21T06:47:55Z | |
| تاريخ الإتاحة | 2023-12-21T06:47:55Z | |
| تاريخ النشر | 2015 | |
| معرّف المصادر الموحد | http://www.iiir-mim.gov.iq/xmlui/handle/123456789/1330 | |
| الملخص | have been studied. The built-in voltage have been calculated as a function of frequency at the condition of reverse bias in the range of frequency (20kHz-3MHz), results indicated that this heterojunctions are abrupt type. From the C-V measurements, it was found that the built-in potential (Vbi) was decreases as the frequency measurements forward to higher values within the range of (80KHz-3MHz) for a constant values of the applied voltage. The c-Si/B HJ solar cell yielded has an active area conversion efficiency 15.99% with an open circuit voltage (Voc= 0.621V), short circuit current (Isc= 8.33A) and filling factor (F.F= 0.738). | ar |
| اللغة | en | ar |
| الناشر | Energy & Environment Research Center- Corporation of Research and Industrial Development. College of Education Ibn-Al-Haithem, University of Baghdad. | ar |
| موضوع | heterojunction solar cell, C-V measurement, LCR meter. | ar |
| العنوان | Study the Characteristics of P-N Junction for Single Crystalline Silicon Solar Cell Using the LCR Meter | ar |
| النوع | Article | ar |
