Study the Characteristics of P-N Junction for Single Crystalline Silicon Solar Cell Using the LCR Meter

Abstract

have been studied. The built-in voltage have been calculated as a function of frequency at the condition of reverse bias in the range of frequency (20kHz-3MHz), results indicated that this heterojunctions are abrupt type. From the C-V measurements, it was found that the built-in potential (Vbi) was decreases as the frequency measurements forward to higher values within the range of (80KHz-3MHz) for a constant values of the applied voltage. The c-Si/B HJ solar cell yielded has an active area conversion efficiency 15.99% with an open circuit voltage (Voc= 0.621V), short circuit current (Isc= 8.33A) and filling factor (F.F= 0.738).