13. Fabrication of AgAl/SiSolar Cell

Abstract

The structural, optical and photoelectrical properties of fabricated diffusion hetero-junction (HJ) solar cell,from n-type c-Si wafer of [400] direction with Boron, have been studied. AgAlalloys was used because of its properties that effect as a good connection materials.TiO2 has been used as a reflecting layerto increase theradiation absorption. The HJ has direct allowed energy gap equal to 3.1 eV. The c-Si/B HJ solar cell has an active area conversion efficiency of 16.4% with an open circuit voltage of (Voc) 0.592V, short circuit current (Isc) of 2.042mA, fill factor (F.F) of 0.682,and ƞ% =10.54.