Analyzing and Studying the Photo-electric Properties of CuInSe2 Solar Cell تحليل ودراسة الخصائص الكهروضوئية للخلية الشمسية نوع CuInSe2

Abstract

The structural properties of CuInSe2 thin films of (700 nm) thickness have been studied. X-ray diffraction has shown that the thin films have polycrystalline structure. The diffusion CuInSe2/n-Si heterojunction solar cell has been fabricated from crystalline silicon wafer of [111] direction. (TiO2) has been used as an anti-reflecting layer to increase the absorption radiation. Solar cells, which were produced in this research, exhibit significantly lower open circuit voltages of maximum (Voc=0.35 V) , (Isc= 30mA/cm2) , (F.F=0.7 and ƞ= 5.3%).